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Browsing by Author Rao, V. Ramgopal

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Issue DateTitleAuthor(s)
2010-06A Novel Bottom Spacer FinFET Structure for Improved Short-Channel, Power-Delay, and Thermal PerformanceRao, V. Ramgopal
2012-10A Novel Drain-Extended FinFET Device for High-Voltage High-Speed ApplicationsRao, V. Ramgopal
2007-05A novel dry method for surface modification of SU-8 for immobilization of biomolecules in Bio-MEMSRao, V. Ramgopal
2003-02A novel dynamic threshold operation using electrically induced junction MOSFET in the deep sub-micrometer CMOS regimeRao, V. Ramgopal
2016Novel hydroxy-phenyl phosphorus porphyrin self-assembled monolayers for conformal n-type doping in FinfetsRao, V. Ramgopal
2018-11A Novel Method of Discrete-Time Signal Amplification Using NEMS DevicesRao, V. Ramgopal
2017-08A Novel PET-Based Piezoresistive MEMS Sensor Platform for Agricultural ApplicationsRao, V. Ramgopal
2012-04A Novel Photoplastic Piezoelectric Nanocomposite for MEMS ApplicationsRao, V. Ramgopal
2016-11A novel piezoresistive polymer nanocomposite MEMS accelerometerRao, V. Ramgopal
2014-12A Novel SU8 Polymer Anchored Low Temperature HWCVD Nitride Polysilicon Piezoresitive CantileverRao, V. Ramgopal
2009-07A Novel Table-Based Approach for Design of FinFET CircuitsRao, V. Ramgopal
2017-02A Novel TCAD based Thermal Extraction Approach for Nano-scale FinFETsRao, V. Ramgopal
2016-02OFET based explosive sensors using diketopyrrolopyrrole and metal organic framework composite active channel materialRao, V. Ramgopal
2010-09On the Behavior of STI-Type DeNMOS Device Under ESD ConditionsRao, V. Ramgopal
2015-06On the breakdown physics of trench-gate drain extended NMOSRao, V. Ramgopal
2008-04On the dc and noise properties of the gate current in epitaxial Ge p -channel metal oxide semiconductor field effect transistors with TiN∕TaN∕HfO2∕SiO2 gate stackRao, V. Ramgopal
2010-05On the differences between 3D filamentation and failure of N & P type drain extended MOS devices under ESD conditionRao, V. Ramgopal
2010-05On the failure mechanism and current instabilities in RESURF type DeNMOS device under ESD conditionsRao, V. Ramgopal
2016-04On the Geometrically Dependent Quasi-Saturation and gm Reduction in Advanced DeMOS TransistorsRao, V. Ramgopal
2016-11On the Improved High-Frequency Linearity of Drain Extended MOS DevicesRao, V. Ramgopal