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Please use this identifier to cite or link to this item: http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/10021
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dc.contributor.authorArora, Pankaj-
dc.date.accessioned2023-03-28T10:45:03Z-
dc.date.available2023-03-28T10:45:03Z-
dc.date.issued2022-07-
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S0030402622005320-
dc.identifier.urihttp://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/10021-
dc.description.abstractIn this work, we have proposed graphene decorated Aluminum (Al) nanostructure-based plasmonic device for sensing in the near-infrared region where the same engineered plasmonic device can be used under both angle as well as wavelength interrogation with high sensitivity and Figure of Merit (FOM) simultaneously. A detailed analysis using rigorous coupled-wave analysis is carried out to prove the feasibility of the proposed plasmonic device with the same designed parameters to operate in two interrogation modes, which is impossible in conventional prism configuration. The performance parameters, sensitivity, and FOM are found to be 1000 nm/RIU and 333.33RIU−1 during wavelength interrogation and 119º/RIU and 318.91RIU−1 for the angle interrogation respectively. Finally, the biosensing application is carried out by demonstrating the glucose concentration detection in the urine samples. The proposed Al-based plasmonic device decorated with graphene layer has the advantages of being cost-effective and possessing real-time sensing capability, paving the way for biomedical applications in the near-infrared region.en_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.subjectEEEen_US
dc.subjectSurface plasmon resonanceen_US
dc.subjectAluminum-nanostructuresen_US
dc.subjectNear-infrared regionen_US
dc.subjectAngle interrogationen_US
dc.subjectWavelength interrogationen_US
dc.subjectBiosensingen_US
dc.titleGraphene decorated aluminum-nanostructure based plasmonic device with enhanced sensitivity and figure of merit using both wavelength and angle interrogationen_US
dc.typeArticleen_US
Appears in Collections:Department of Electrical and Electronics Engineering

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