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DC Field | Value | Language |
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dc.contributor.author | Kumar, Rahul | - |
dc.date.accessioned | 2023-04-03T06:16:53Z | - |
dc.date.available | 2023-04-03T06:16:53Z | - |
dc.date.issued | 2021-02 | - |
dc.identifier.uri | https://aip.scitation.org/doi/10.1063/5.0039107 | - |
dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/10121 | - |
dc.description.abstract | A nondestructive approach is described that is applicable for studying the In-segregation phenomena in ultra-thin In(Ga)As/GaAs nanostructures grown by molecular beam epitaxy. The proposed method utilizes only the experimental photoluminescence (PL) spectroscopy data and the effective bandgap simulation of specially designed ultra-thin In(Ga)As/GaAs nanostructures. On the example of InAs and In0.25Ga0.75As quantum wells with thicknesses of 1 monolayer (ML) and 4 MLs, respectively, a good correlation for the In segregation coefficient obtained from the proposed method and STEM (scanning transmission electron microscope) Z-contrast cross section imaging is demonstrated. However, PL has a significant advantage over STEM for being a nondestructive, reliable, and rapid technique for measuring multiple samples or large areas. Furthermore, tuning of In segregation in ultra-thin In(Ga)As/GaAs nanostructures, as well as the possibility of modifying and controlling the In depth-distribution profile by the change of growth temperature or the thickness of the low-temperature GaAs capping layer, are additionally demonstrated. A detailed analysis of indium segregation allows the design and precise growth of ultra-thin In(Ga)As/GaAs nanostructures for lasers, solar cells, and infrared photodetectors. This work was partially supported by the National Science Foundation, Grant No. 1809054. | en_US |
dc.language.iso | en | en_US |
dc.publisher | AIP | en_US |
dc.subject | EEE | en_US |
dc.subject | Photoluminescence spectroscopy | en_US |
dc.subject | In(Ga)As/GaAs single quantum | en_US |
dc.title | Indium segregation in ultra-thin In(Ga)As/GaAs single quantum wells revealed by photoluminescence spectroscopy | en_US |
dc.type | Article | en_US |
Appears in Collections: | Department of Electrical and Electronics Engineering |
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