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Title: | High temperature capacitors using AlN grown by MBE as the dielectric |
Authors: | Kumar, Rahul |
Keywords: | EEE Dielectric constant Capacitors |
Issue Date: | Jun-2018 |
Publisher: | AIP |
Abstract: | The authors present the use of epitaxial AlN as the dielectric in a chip level thin film capacitor for operation at high temperatures and high frequencies. They have performed capacitance measurements up to 600 K. The basic performance is modeled as a simple metal-insulator-semiconductor capacitor, which provides insight into the underlying mechanisms of accumulation, depletion, and inversion. Throughout the tested temperature range, the capacitance is highly stable with only a slight, linear, decrease with temperature. Additionally, at low frequencies, the capacitor exhibits very high capacitance with an expected decrease with increasing frequency |
URI: | https://avs.scitation.org/doi/10.1116/1.5033931 http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/10128 |
Appears in Collections: | Department of Electrical and Electronics Engineering |
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