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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kumar, Rahul | - |
dc.date.accessioned | 2023-04-03T06:40:55Z | - |
dc.date.available | 2023-04-03T06:40:55Z | - |
dc.date.issued | 2018-06 | - |
dc.identifier.uri | https://avs.scitation.org/doi/10.1116/1.5033931 | - |
dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/10128 | - |
dc.description.abstract | The authors present the use of epitaxial AlN as the dielectric in a chip level thin film capacitor for operation at high temperatures and high frequencies. They have performed capacitance measurements up to 600 K. The basic performance is modeled as a simple metal-insulator-semiconductor capacitor, which provides insight into the underlying mechanisms of accumulation, depletion, and inversion. Throughout the tested temperature range, the capacitance is highly stable with only a slight, linear, decrease with temperature. Additionally, at low frequencies, the capacitor exhibits very high capacitance with an expected decrease with increasing frequency | en_US |
dc.language.iso | en | en_US |
dc.publisher | AIP | en_US |
dc.subject | EEE | en_US |
dc.subject | Dielectric constant | en_US |
dc.subject | Capacitors | en_US |
dc.title | High temperature capacitors using AlN grown by MBE as the dielectric | en_US |
dc.type | Article | en_US |
Appears in Collections: | Department of Electrical and Electronics Engineering |
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