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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kumar, Rahul | - |
dc.date.accessioned | 2023-04-03T08:49:59Z | - |
dc.date.available | 2023-04-03T08:49:59Z | - |
dc.date.issued | 2017-03 | - |
dc.identifier.uri | https://ieeexplore.ieee.org/document/7805266 | - |
dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/10132 | - |
dc.description.abstract | A new and exciting resistive gas sensor based on Ni/InGaN/GaN heterostructure, grown by plasma-assisted molecular beam epitaxy, has been developed to efficiently detect acetone very rapidly at low temperature. Non-rectifying I-V characteristics of epitaxially relaxed InGaN with Ni contact have been revealed at 373 K. An incremental current of 11.74 μA has been found at 373 K with the exposure of 100 ppm of acetone vapor at an operating bias of 0.4 V. Sensitivity has been obtained from transient response curves. Most importantly, very fast response/recovery characteristics with good baseline recovery have been witnessed. The response time and recovery time have been found to be ~7.6-8.4 s and ~4.5-19.1 s. A possible explanation, including Langmuir adsorption-desorption isotherm, has also been discussed. | en_US |
dc.language.iso | en | en_US |
dc.publisher | IEEE | en_US |
dc.subject | EEE | en_US |
dc.subject | Fast response | en_US |
dc.subject | Acetone sensor | en_US |
dc.subject | InGaN/GaN | en_US |
dc.subject | Resistive device | en_US |
dc.title | Fast Response (7.6s) Acetone Sensing by InGaN/GaN on Si (111) at 373 K | en_US |
dc.type | Article | en_US |
Appears in Collections: | Department of Electrical and Electronics Engineering |
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