Reverse bias leakage current mechanism of AlGaN/InGaN/GaN heterostructure

Please use this identifier to cite or link to this item: http://dspace.bits-pilani.ac.in:8080/jspui/handle/123456789/10135

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DC Field	Value	Language
dc.contributor.author	Kumar, Rahul	-
dc.date.accessioned	2023-04-03T08:57:18Z	-
dc.date.available	2023-04-03T08:57:18Z	-
dc.date.issued	2016-03	-
dc.identifier.uri	https://link.springer.com/article/10.1007/s13391-015-5249-9	-
dc.identifier.uri	http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/10135	-
dc.description.abstract	The reverse bias leakage current mechanism of AlGaN/InGaN/GaN heterostructure is investigated by current-voltage measurement in temperature range from 298 K to 423 K. The Higher electric field across the AlGaN barrier layer of AlGaN/InGaN/GaN double heterostructure due to higher polarization charge is found to be responsible for strong Fowler-Nordheim (FN) tunnelling in the electric field higher than 3.66 MV/cm. For electric field less than 3.56 MV/cm, the reverse bias leakage current is also found to follow the trap assisted Frenkel-Poole (FP) emission in low negative bias region. Analysis of reverse FP emission yielded the barrier height of trap energy level of 0.34 eV with respect to Fermi level.	en_US
dc.language.iso	en	en_US
dc.publisher	Springer	en_US
dc.subject	EEE	en_US
dc.subject	AlGaN/GaN heterostructure	en_US
dc.title	Reverse bias leakage current mechanism of AlGaN/InGaN/GaN heterostructure	en_US
dc.type	Article	en_US
Appears in Collections:	Department of Electrical and Electronics Engineering

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