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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kumar, Rahul | - |
dc.date.accessioned | 2023-04-03T08:57:18Z | - |
dc.date.available | 2023-04-03T08:57:18Z | - |
dc.date.issued | 2016-03 | - |
dc.identifier.uri | https://link.springer.com/article/10.1007/s13391-015-5249-9 | - |
dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/10135 | - |
dc.description.abstract | The reverse bias leakage current mechanism of AlGaN/InGaN/GaN heterostructure is investigated by current-voltage measurement in temperature range from 298 K to 423 K. The Higher electric field across the AlGaN barrier layer of AlGaN/InGaN/GaN double heterostructure due to higher polarization charge is found to be responsible for strong Fowler-Nordheim (FN) tunnelling in the electric field higher than 3.66 MV/cm. For electric field less than 3.56 MV/cm, the reverse bias leakage current is also found to follow the trap assisted Frenkel-Poole (FP) emission in low negative bias region. Analysis of reverse FP emission yielded the barrier height of trap energy level of 0.34 eV with respect to Fermi level. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Springer | en_US |
dc.subject | EEE | en_US |
dc.subject | AlGaN/GaN heterostructure | en_US |
dc.title | Reverse bias leakage current mechanism of AlGaN/InGaN/GaN heterostructure | en_US |
dc.type | Article | en_US |
Appears in Collections: | Department of Electrical and Electronics Engineering |
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