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Title: | Reverse bias leakage current mechanism of AlGaN/InGaN/GaN heterostructure |
Authors: | Kumar, Rahul |
Keywords: | EEE AlGaN/GaN heterostructure |
Issue Date: | Mar-2016 |
Publisher: | Springer |
Abstract: | The reverse bias leakage current mechanism of AlGaN/InGaN/GaN heterostructure is investigated by current-voltage measurement in temperature range from 298 K to 423 K. The Higher electric field across the AlGaN barrier layer of AlGaN/InGaN/GaN double heterostructure due to higher polarization charge is found to be responsible for strong Fowler-Nordheim (FN) tunnelling in the electric field higher than 3.66 MV/cm. For electric field less than 3.56 MV/cm, the reverse bias leakage current is also found to follow the trap assisted Frenkel-Poole (FP) emission in low negative bias region. Analysis of reverse FP emission yielded the barrier height of trap energy level of 0.34 eV with respect to Fermi level. |
URI: | https://link.springer.com/article/10.1007/s13391-015-5249-9 http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/10135 |
Appears in Collections: | Department of Electrical and Electronics Engineering |
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