Fowler–Nordheim Tunnelling Contribution in AlGaN/GaN on Si (111) Schottky Current

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DC Field	Value	Language
dc.contributor.author	Kumar, Rahul	-
dc.date.accessioned	2023-04-03T09:26:06Z	-
dc.date.available	2023-04-03T09:26:06Z	-
dc.date.issued	2016	-
dc.identifier.uri	https://www.tandfonline.com/doi/abs/10.1080/02564602.2015.1042933?journalCode=titr20	-
dc.identifier.uri	http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/10139	-
dc.description.abstract	AlGaN/GaN heterojunction with Schottky metal contact can be modelled with two back-to-back diodes. The forward-biased diode between metal and AlGaN barrier acts at the onset of current with positive bias. Fowler– Nordheim tunnelling is mainly responsible for the electron transport at the low positive bias level. Downward energy band bending of AlGaN barrier with further positive voltage reduces the tunnelling probability due to lowering of the barrier height of the first diode, causing a dramatic change in the current.	en_US
dc.language.iso	en	en_US
dc.publisher	Taylor & Francis	en_US
dc.subject	EEE	en_US
dc.subject	AlGaN/GaN heterostructure	en_US
dc.subject	Fowler–Nordheim	en_US
dc.subject	Tunnelling	en_US
dc.subject	Schottky Barrier	en_US
dc.title	Fowler–Nordheim Tunnelling Contribution in AlGaN/GaN on Si (111) Schottky Current	en_US
dc.type	Article	en_US
Appears in Collections:	Department of Electrical and Electronics Engineering

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