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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kumar, Rahul | - |
dc.date.accessioned | 2023-04-03T10:05:55Z | - |
dc.date.available | 2023-04-03T10:05:55Z | - |
dc.date.issued | 2020-10 | - |
dc.identifier.uri | https://inspirehep.net/literature/1840730 | - |
dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/10147 | - |
dc.description.abstract | We present progress on incorporation of nanopillar arrays into spin-polarized gallium arsenide photocathodes in pursuit of record high tolerance to ion back-bombardment. Our goal is to exceed the 400 Coulomb record for a high polarization milliampere-class electron source set at Jefferson Laboratory in 2017, while maintaining high quantum efficiency (QE) and spin polarization with a superlattice. Because the Mie effect is resonant, uniformity and careful control over nanostructure geometry is key. We report excellent uniformity and straight sidewall geometry with improved optical absorption using a painstakingly optimized inductively coupled plasma reactive ion etch. We also report the application of Kerker theory to spin-polarized photocathode nanopillar arrays, setting new requirements on nanostructure dimensions to avoid spoiling spin polarization. Finally, we also report initial steps toward re-establishing U.S. production of strained superlattice photocathodes towards integration with nanopillar arrays. | en_US |
dc.language.iso | en | en_US |
dc.publisher | NAPAC | en_US |
dc.subject | EEE | en_US |
dc.subject | Cathode | en_US |
dc.subject | Polarization | en_US |
dc.subject | Lattice | en_US |
dc.subject | Scattering | en_US |
dc.subject | Electron | en_US |
dc.title | Nanostructured Photocathodes For Spin-Polarized Electron Beams | en_US |
dc.type | Article | en_US |
Appears in Collections: | Department of Electrical and Electronics Engineering |
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