Nanostructured Photocathodes For Spin-Polarized Electron Beams

Abstract

We present progress on incorporation of nanopillar arrays into spin-polarized gallium arsenide photocathodes in pursuit of record high tolerance to ion back-bombardment. Our goal is to exceed the 400 Coulomb record for a high polarization milliampere-class electron source set at Jefferson Laboratory in 2017, while maintaining high quantum efficiency (QE) and spin polarization with a superlattice. Because the Mie effect is resonant, uniformity and careful control over nanostructure geometry is key. We report excellent uniformity and straight sidewall geometry with improved optical absorption using a painstakingly optimized inductively coupled plasma reactive ion etch. We also report the application of Kerker theory to spin-polarized photocathode nanopillar arrays, setting new requirements on nanostructure dimensions to avoid spoiling spin polarization. Finally, we also report initial steps toward re-establishing U.S. production of strained superlattice photocathodes towards integration with nanopillar arrays.