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http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/10148| Title: | Excitation intensity and InAs thickness dependent luminescence properties of ultrathin InAs layer in GaAs matrix |
| Authors: | Kumar, Rahul |
| Keywords: | EEE GaAs matrix Emission mechanism |
| Issue Date: | 2018 |
| Publisher: | AIP |
| Abstract: | A set of samples containing a single ultrathin InAs layer with varying thickness from 0.5 to 1.4ML in a GaAs matrix have been grown by molecular beam epitaxy on GaAs (001) substrates at low temperatures and investigated by low-temperature photoluminescence (PL). A linear change in emission energy with InAs thickness has been experimentally observed. The PL emission line shape from InAs/GaAs heterostructures has been investigated as a function of incident optical intensity. The interplay between uncorrelated electron-hole pairs, free excitons, and localized excitons, as a function of the excitation intensity, is found to play a significant role on the optical properties of the InAs layer and is described in detail |
| URI: | https://aip.scitation.org/doi/10.1063/1.5053412 http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/10148 |
| Appears in Collections: | Department of Electrical and Electronics Engineering |
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