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Please use this identifier to cite or link to this item: http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/10148
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dc.contributor.authorKumar, Rahul-
dc.date.accessioned2023-04-03T10:08:16Z-
dc.date.available2023-04-03T10:08:16Z-
dc.date.issued2018-
dc.identifier.urihttps://aip.scitation.org/doi/10.1063/1.5053412-
dc.identifier.urihttp://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/10148-
dc.description.abstractA set of samples containing a single ultrathin InAs layer with varying thickness from 0.5 to 1.4ML in a GaAs matrix have been grown by molecular beam epitaxy on GaAs (001) substrates at low temperatures and investigated by low-temperature photoluminescence (PL). A linear change in emission energy with InAs thickness has been experimentally observed. The PL emission line shape from InAs/GaAs heterostructures has been investigated as a function of incident optical intensity. The interplay between uncorrelated electron-hole pairs, free excitons, and localized excitons, as a function of the excitation intensity, is found to play a significant role on the optical properties of the InAs layer and is described in detailen_US
dc.language.isoenen_US
dc.publisherAIPen_US
dc.subjectEEEen_US
dc.subjectGaAs matrixen_US
dc.subjectEmission mechanismen_US
dc.titleExcitation intensity and InAs thickness dependent luminescence properties of ultrathin InAs layer in GaAs matrixen_US
dc.typeArticleen_US
Appears in Collections:Department of Electrical and Electronics Engineering

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