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Please use this identifier to cite or link to this item: http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/10151
Title: Simplified gas sensor model based on AlGaN/GaN heterostructure Schottky diode
Authors: Kumar, Rahul
Keywords: EEE
AlGaN/GaN heterostructure
Schottky diode
Issue Date: Aug-2015
Publisher: AIP
Abstract: Physics based modeling of AlGaN/GaN heterostructure Schottky diode gas sensor has been investigated for high sensitivity and linearity of the device. Here the surface and heterointerface properties are greatly exploited. The dependence of two dimensional electron gas (2DEG) upon the surface charges is mainly utilized. The simulation of Schottky diode has been done in Technology Computer Aided Design (TCAD) tool and I-V curves are generated, from the I-V curves 76% response has been recorded in presence of 500 ppm gas at a biasing voltage of 0.95 Volt
URI: https://aip.scitation.org/doi/10.1063/1.4929172
http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/10151
Appears in Collections:Department of Electrical and Electronics Engineering

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