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Please use this identifier to cite or link to this item: http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/10151
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dc.contributor.authorKumar, Rahul-
dc.date.accessioned2023-04-03T10:33:27Z-
dc.date.available2023-04-03T10:33:27Z-
dc.date.issued2015-08-
dc.identifier.urihttps://aip.scitation.org/doi/10.1063/1.4929172-
dc.identifier.urihttp://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/10151-
dc.description.abstractPhysics based modeling of AlGaN/GaN heterostructure Schottky diode gas sensor has been investigated for high sensitivity and linearity of the device. Here the surface and heterointerface properties are greatly exploited. The dependence of two dimensional electron gas (2DEG) upon the surface charges is mainly utilized. The simulation of Schottky diode has been done in Technology Computer Aided Design (TCAD) tool and I-V curves are generated, from the I-V curves 76% response has been recorded in presence of 500 ppm gas at a biasing voltage of 0.95 Volten_US
dc.language.isoenen_US
dc.publisherAIPen_US
dc.subjectEEEen_US
dc.subjectAlGaN/GaN heterostructureen_US
dc.subjectSchottky diodeen_US
dc.titleSimplified gas sensor model based on AlGaN/GaN heterostructure Schottky diodeen_US
dc.typeArticleen_US
Appears in Collections:Department of Electrical and Electronics Engineering

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