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http://dspace.bits-pilani.ac.in:8080/jspui/handle/123456789/10155| Title: | Effect of Longitudinal Electric Field and Self Heating of Channel on Linearity and Gain of AlGaN/GaN HEMT on Sapphire (0001) |
| Authors: | Kumar, Rahul |
| Keywords: | EEE High-electron-mobility transistor (HEMT) AlGaN/GaN Sapphire Linearity Gain |
| Issue Date: | 2014 |
| Publisher: | IEEE |
| Abstract: | Change of linearity and gain with different drain and gate bias has been studied for AlGaN/GaN HEMT on Sapphire substrate. While linearity increases with higher drain bias, maximum gain of the device decreases. Generation of more phonon and its related scattering of electrons decrease the mobility of carries. It further minimizes the drain current at high longitudinal field on 2DEG channel. |
| URI: | https://ieeexplore.ieee.org/abstract/document/6808083 http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/10155 |
| Appears in Collections: | Department of Electrical and Electronics Engineering |
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