Please use this identifier to cite or link to this item:
http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/10155Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kumar, Rahul | - |
| dc.date.accessioned | 2023-04-03T10:44:05Z | - |
| dc.date.available | 2023-04-03T10:44:05Z | - |
| dc.date.issued | 2014 | - |
| dc.identifier.uri | https://ieeexplore.ieee.org/abstract/document/6808083 | - |
| dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/10155 | - |
| dc.description.abstract | Change of linearity and gain with different drain and gate bias has been studied for AlGaN/GaN HEMT on Sapphire substrate. While linearity increases with higher drain bias, maximum gain of the device decreases. Generation of more phonon and its related scattering of electrons decrease the mobility of carries. It further minimizes the drain current at high longitudinal field on 2DEG channel. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | IEEE | en_US |
| dc.subject | EEE | en_US |
| dc.subject | High-electron-mobility transistor (HEMT) | en_US |
| dc.subject | AlGaN/GaN Sapphire | en_US |
| dc.subject | Linearity | en_US |
| dc.subject | Gain | en_US |
| dc.title | Effect of Longitudinal Electric Field and Self Heating of Channel on Linearity and Gain of AlGaN/GaN HEMT on Sapphire (0001) | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | Department of Electrical and Electronics Engineering | |
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.