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| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Kumar, Rahul | - |
| dc.date.accessioned | 2023-04-03T10:46:01Z | - |
| dc.date.available | 2023-04-03T10:46:01Z | - |
| dc.date.issued | 2014 | - |
| dc.identifier.uri | https://ieeexplore.ieee.org/abstract/document/6808082 | - |
| dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/10156 | - |
| dc.description.abstract | High quality pseudomorphic Al 0.15 Ga 0.85 As/GaAs heterostructure was grown on an semi-insulating GaAs(100) substrate by Molecular Beam Epitaxy(MBE). Analysis of this structure was done by Photoluminescence (PL), HALL and High Resolution X-Ray diffraction (HRXRD). The nominal structure was confirmed by HRXRD, and aluminum mole fraction was measured from peak separation of the AlGaAs-GaAs (004) reflections. The layer thickness, and interface roughness were estimated from X-ray reflectivity (XRR) by fit with computer simulation. The carrier concentration, mobility and sheet resistance were measured from temperature dependent Hall experiment. The transport properties of the as-grown structure are found to be at par with the best literature reports. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | IEEE | en_US |
| dc.subject | EEE | en_US |
| dc.subject | MBE | en_US |
| dc.subject | High-Resolution X-Ray Diffraction (HRXRD) | en_US |
| dc.subject | PL | en_US |
| dc.title | Growth and characterization of Al0.15Ga0.85As/GaAs pseudomorphic heterostructure by MBE | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | Department of Electrical and Electronics Engineering | |
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