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Please use this identifier to cite or link to this item: http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/10191
Title: Development of Pd-Pt functionalized high performance H2 gas sensor based on silicon carbide coated porous silicon for extreme environment applications
Authors: Mourya, Satyendra Kumar
Keywords: EEE
Porous silicon
RF sputtering
Silicon carbide (SiC) thin films
Hydrogen sensor
Issue Date: Mar-2019
Publisher: Elsevier
Abstract: Present work demonstrates the hydrogen gas (H2) sensing characteristics of palladium-platinum (Pd-Pt) functionalized silicon carbide (SiC) thin film grown on porous silicon (PSi) substrate for high temperature applications. Nano-crystalline SiC thin film was deposited by RF magnetron sputtering on anodized PSi substrate. The loading of discrete ultra-thin Pd-Pt bimetallic catalytic layer was carefully controlled by varying the sputtering parameters. The proposed device architecture (Pd-Pt/SiC/PSi) revealed significant advantages, such as stable high sensing response, large tunable detection range (5–500 ppm), fast response/recovery time, excellent reproducibility, high selectivity, wide operating temperature regime (25–500 °C) and good durability. The observed high response may be ascribed to the combined effect of enhanced catalytic activity of bimetallic Pd-Pt layer and increased surface area of the proposed sensor.
URI: https://www.sciencedirect.com/science/article/pii/S0925400518321610
http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/10191
Appears in Collections:Department of Electrical and Electronics Engineering

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