Please use this identifier to cite or link to this item:
http://dspace.bits-pilani.ac.in:8080/jspui/handle/123456789/10191
Title: | Development of Pd-Pt functionalized high performance H2 gas sensor based on silicon carbide coated porous silicon for extreme environment applications |
Authors: | Mourya, Satyendra Kumar |
Keywords: | EEE Porous silicon RF sputtering Silicon carbide (SiC) thin films Hydrogen sensor |
Issue Date: | Mar-2019 |
Publisher: | Elsevier |
Abstract: | Present work demonstrates the hydrogen gas (H2) sensing characteristics of palladium-platinum (Pd-Pt) functionalized silicon carbide (SiC) thin film grown on porous silicon (PSi) substrate for high temperature applications. Nano-crystalline SiC thin film was deposited by RF magnetron sputtering on anodized PSi substrate. The loading of discrete ultra-thin Pd-Pt bimetallic catalytic layer was carefully controlled by varying the sputtering parameters. The proposed device architecture (Pd-Pt/SiC/PSi) revealed significant advantages, such as stable high sensing response, large tunable detection range (5–500 ppm), fast response/recovery time, excellent reproducibility, high selectivity, wide operating temperature regime (25–500 °C) and good durability. The observed high response may be ascribed to the combined effect of enhanced catalytic activity of bimetallic Pd-Pt layer and increased surface area of the proposed sensor. |
URI: | https://www.sciencedirect.com/science/article/pii/S0925400518321610 http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/10191 |
Appears in Collections: | Department of Electrical and Electronics Engineering |
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.