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Please use this identifier to cite or link to this item: http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/10191
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dc.contributor.authorMourya, Satyendra Kumar-
dc.date.accessioned2023-04-06T05:31:29Z-
dc.date.available2023-04-06T05:31:29Z-
dc.date.issued2019-03-
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S0925400518321610-
dc.identifier.urihttp://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/10191-
dc.description.abstractPresent work demonstrates the hydrogen gas (H2) sensing characteristics of palladium-platinum (Pd-Pt) functionalized silicon carbide (SiC) thin film grown on porous silicon (PSi) substrate for high temperature applications. Nano-crystalline SiC thin film was deposited by RF magnetron sputtering on anodized PSi substrate. The loading of discrete ultra-thin Pd-Pt bimetallic catalytic layer was carefully controlled by varying the sputtering parameters. The proposed device architecture (Pd-Pt/SiC/PSi) revealed significant advantages, such as stable high sensing response, large tunable detection range (5–500 ppm), fast response/recovery time, excellent reproducibility, high selectivity, wide operating temperature regime (25–500 °C) and good durability. The observed high response may be ascribed to the combined effect of enhanced catalytic activity of bimetallic Pd-Pt layer and increased surface area of the proposed sensor.en_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.subjectEEEen_US
dc.subjectPorous siliconen_US
dc.subjectRF sputteringen_US
dc.subjectSilicon carbide (SiC) thin filmsen_US
dc.subjectHydrogen sensoren_US
dc.titleDevelopment of Pd-Pt functionalized high performance H2 gas sensor based on silicon carbide coated porous silicon for extreme environment applicationsen_US
dc.typeArticleen_US
Appears in Collections:Department of Electrical and Electronics Engineering

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