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DC Field | Value | Language |
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dc.contributor.author | Mourya, Satyendra Kumar | - |
dc.date.accessioned | 2023-04-06T05:31:29Z | - |
dc.date.available | 2023-04-06T05:31:29Z | - |
dc.date.issued | 2019-03 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/pii/S0925400518321610 | - |
dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/10191 | - |
dc.description.abstract | Present work demonstrates the hydrogen gas (H2) sensing characteristics of palladium-platinum (Pd-Pt) functionalized silicon carbide (SiC) thin film grown on porous silicon (PSi) substrate for high temperature applications. Nano-crystalline SiC thin film was deposited by RF magnetron sputtering on anodized PSi substrate. The loading of discrete ultra-thin Pd-Pt bimetallic catalytic layer was carefully controlled by varying the sputtering parameters. The proposed device architecture (Pd-Pt/SiC/PSi) revealed significant advantages, such as stable high sensing response, large tunable detection range (5–500 ppm), fast response/recovery time, excellent reproducibility, high selectivity, wide operating temperature regime (25–500 °C) and good durability. The observed high response may be ascribed to the combined effect of enhanced catalytic activity of bimetallic Pd-Pt layer and increased surface area of the proposed sensor. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Elsevier | en_US |
dc.subject | EEE | en_US |
dc.subject | Porous silicon | en_US |
dc.subject | RF sputtering | en_US |
dc.subject | Silicon carbide (SiC) thin films | en_US |
dc.subject | Hydrogen sensor | en_US |
dc.title | Development of Pd-Pt functionalized high performance H2 gas sensor based on silicon carbide coated porous silicon for extreme environment applications | en_US |
dc.type | Article | en_US |
Appears in Collections: | Department of Electrical and Electronics Engineering |
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