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Please use this identifier to cite or link to this item: http://dspace.bits-pilani.ac.in:8080/jspui/handle/123456789/10207
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dc.contributor.authorVidhyadharan, Sanjay-
dc.date.accessioned2023-04-06T09:07:02Z-
dc.date.available2023-04-06T09:07:02Z-
dc.date.issued2023-01-
dc.identifier.urihttps://www.tandfonline.com/doi/abs/10.1080/03772063.2023.2165176?journalCode=tijr20-
dc.identifier.urihttp://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/10207-
dc.description.abstractThis paper presents CMOS and CNFET based hysteresis voltage comparators for low-voltage applications. The proposed CMOS and CNFET hysteresis comparators require merely 1.6 and 0.26 µW of power, respectively, which is less than one tenth of the power dissipated by the other advanced hysteresis comparators designs available in literature. The propagation delay observed in the proposed CMOS and CNFET hysteresis comparators are 162 and 47 ps, respectively, which is almost half the delay exhibited by the other hysteresis comparators. Overall, a 93–99% reduction in Power Delay Product (PDP) can be achieved. Furthermore, the proposed design requires only nine transistors compared to the 11–17 transistor requirement in conventional hysteresis comparators, thus saving up to 47% of chip area.en_US
dc.language.isoenen_US
dc.publisherTaylor & Francisen_US
dc.subjectEEEen_US
dc.subject45 nm CMOS technologyen_US
dc.subjectCarbon Nanotube Field-Effect Transistors (CNFETs)en_US
dc.subjectHysteresis voltage comparatoren_US
dc.subjectLow-power voltage comparatoren_US
dc.subjectPower-delay-producten_US
dc.titleFast and Low-Power CMOS and CNFET based Hysteresis Voltage Comparatoren_US
dc.typeArticleen_US
Appears in Collections:Department of Electrical and Electronics Engineering

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