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Title: | Non-Volatile Organic Transistor Memory Based on Black Phosphorus Quantum Dots as Charge Trapping Layer |
Authors: | Rao, V. Ramgopal |
Keywords: | EEE Black phosphorus Quantum dots Floating gate transistor Organic memory Solution-processed |
Issue Date: | Jun-2020 |
Publisher: | IEEE |
Abstract: | High performance organic nano-floating gate transistor memory (NFGTM) has important prerequisites of low processing temperature, solution-processable layers and charge trapping medium with high storage capacity. We demonstrate organic NFGTM using black phosphorus quantum dots (BPQDs) as a charge trapping medium by simple spin-coating and low processing temperature (<; 120 °C). The BPQDs with diameter of 12.6 ± 1.5 nm and large quantum confined bandgap of ~ 2.9 eV possess good charge trapping ability. The organic memory device exhibits excellent memory performance with a large memory window of 61.3 V, write-read-erase-read cycling endurance of 10 3 for more than 180 cycles and reliable retention over 10,000 sec. In addition, we successfully improved the memory retention to ON/OFF current ratio > 10 4 over 10,000 sec by introducing PMMA as the tunneling layer. |
URI: | https://ieeexplore.ieee.org/document/9081980 http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12558 |
Appears in Collections: | Department of Electrical and Electronics Engineering |
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