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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Rao, V. Ramgopal | - |
dc.date.accessioned | 2023-10-20T10:05:55Z | - |
dc.date.available | 2023-10-20T10:05:55Z | - |
dc.date.issued | 2020-06 | - |
dc.identifier.uri | https://ieeexplore.ieee.org/document/9081980 | - |
dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12558 | - |
dc.description.abstract | High performance organic nano-floating gate transistor memory (NFGTM) has important prerequisites of low processing temperature, solution-processable layers and charge trapping medium with high storage capacity. We demonstrate organic NFGTM using black phosphorus quantum dots (BPQDs) as a charge trapping medium by simple spin-coating and low processing temperature (<; 120 °C). The BPQDs with diameter of 12.6 ± 1.5 nm and large quantum confined bandgap of ~ 2.9 eV possess good charge trapping ability. The organic memory device exhibits excellent memory performance with a large memory window of 61.3 V, write-read-erase-read cycling endurance of 10 3 for more than 180 cycles and reliable retention over 10,000 sec. In addition, we successfully improved the memory retention to ON/OFF current ratio > 10 4 over 10,000 sec by introducing PMMA as the tunneling layer. | en_US |
dc.language.iso | en | en_US |
dc.publisher | IEEE | en_US |
dc.subject | EEE | en_US |
dc.subject | Black phosphorus | en_US |
dc.subject | Quantum dots | en_US |
dc.subject | Floating gate transistor | en_US |
dc.subject | Organic memory | en_US |
dc.subject | Solution-processed | en_US |
dc.title | Non-Volatile Organic Transistor Memory Based on Black Phosphorus Quantum Dots as Charge Trapping Layer | en_US |
dc.type | Article | en_US |
Appears in Collections: | Department of Electrical and Electronics Engineering |
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