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dc.contributor.authorRao, V. Ramgopal-
dc.date.accessioned2023-10-20T10:41:19Z-
dc.date.available2023-10-20T10:41:19Z-
dc.date.issued2019-12-
dc.identifier.urihttps://journals.aps.org/prmaterials/abstract/10.1103/PhysRevMaterials.3.124005-
dc.identifier.urihttp://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12561-
dc.description.abstractWe investigate the longitudinal and transverse piezoresistance effect in suspended graphene in the ballistic regime. Utilizing parametrized tight-binding Hamiltonian along with Landauer quantum transport formalism, we devise a methodology to evaluate the piezoresistance effect in graphene. We evaluate the longitudinal and transverse gauge factor of graphene along armchair and zigzag directions in the linear elastic limit (0%–10%). The gauge factors along armchair and zigzag directions are identical. Our model predicts a significant enhancement (≈1000%) in the value of transverse gauge factor compared to longitudinal gauge factor along with sign inversion. The calculated value of longitudinal gauge factor is ≈0.3, whereas the transverse gauge factor is ≈−3.3. We rationalize our prediction based on the deformation of Dirac cone and change in separation between transverse modes due to longitudinal and transverse strain. The results obtained herein can serve as a template for high-strain piezoresistance effect of graphene in nanoelectromechanical systems.en_US
dc.language.isoenen_US
dc.publisherAPSen_US
dc.subjectEEEen_US
dc.subjectPiezoresistanceen_US
dc.subjectBallistic grapheneen_US
dc.titlePiezoresistance in ballistic grapheneen_US
dc.typeArticleen_US
Appears in Collections:Department of Electrical and Electronics Engineering

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