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Title: | Sub-50-mV Nanoelectromechanical Switch Without Body Bias |
Authors: | Rao, V. Ramgopal |
Keywords: | EEE Diffraction Hysteresis Nanoelectromechanical switch (NEMS) Subthreshold |
Issue Date: | Sep-2020 |
Publisher: | IEEE |
Abstract: | This brief presents a fabricated and characterized 3-terminal (3T) nanoelectromechanical switch (NEMS) featuring for the first time a sub-50-mV pull-in voltage operation without body biasing. The proposed NEMS demonstrates a low hysteresis (<; 20 mV), low turn-on delay (15 ns), and record low subthreshold slope of 2 mV/decade due to the small air gap of only 100 nm between the gate and the source beam realized using a simple and low-cost fabrication process. NEMS is a propitious candidate toward ideal switch exhibiting a zero leakage with ON-state conductance of 0.1 A.V/μm and a sub-50-mV swing providing an ultralow active power consumption. |
URI: | https://ieeexplore.ieee.org/document/8930633 http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12565 |
Appears in Collections: | Department of Electrical and Electronics Engineering |
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