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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Rao, V. Ramgopal | - |
dc.date.accessioned | 2023-10-20T11:01:41Z | - |
dc.date.available | 2023-10-20T11:01:41Z | - |
dc.date.issued | 2020-09 | - |
dc.identifier.uri | https://ieeexplore.ieee.org/document/8930633 | - |
dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12565 | - |
dc.description.abstract | This brief presents a fabricated and characterized 3-terminal (3T) nanoelectromechanical switch (NEMS) featuring for the first time a sub-50-mV pull-in voltage operation without body biasing. The proposed NEMS demonstrates a low hysteresis (<; 20 mV), low turn-on delay (15 ns), and record low subthreshold slope of 2 mV/decade due to the small air gap of only 100 nm between the gate and the source beam realized using a simple and low-cost fabrication process. NEMS is a propitious candidate toward ideal switch exhibiting a zero leakage with ON-state conductance of 0.1 A.V/μm and a sub-50-mV swing providing an ultralow active power consumption. | en_US |
dc.language.iso | en | en_US |
dc.publisher | IEEE | en_US |
dc.subject | EEE | en_US |
dc.subject | Diffraction | en_US |
dc.subject | Hysteresis | en_US |
dc.subject | Nanoelectromechanical switch (NEMS) | en_US |
dc.subject | Subthreshold | en_US |
dc.title | Sub-50-mV Nanoelectromechanical Switch Without Body Bias | en_US |
dc.type | Article | en_US |
Appears in Collections: | Department of Electrical and Electronics Engineering |
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