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Please use this identifier to cite or link to this item: http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/12568
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dc.contributor.authorRao, V. Ramgopal-
dc.date.accessioned2023-10-21T05:23:17Z-
dc.date.available2023-10-21T05:23:17Z-
dc.date.issued2019-
dc.identifier.urihttps://iopscience.iop.org/article/10.1088/1361-6439/ab30a3/data-
dc.identifier.urihttp://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12568-
dc.description.abstractMicro/nano thermogravimetry (TG) employing MEMS has significant potential to improve the minimum sample mass and mass resolution as compared to commercial TG instruments. Although there have been a few previous reports on MEMS TG, none of them have critically analysed the obtained TG curve in detail. In this work, we have designed and fabricated a microelectromechanical thermogravimetric device (MMTG) with integrated microheaters and temperature sensors. The mass sensitivity of the device was estimated to be 0.89 pg Hz−1 which outperforms the standard TG approaches. We tested the MMTG performance with CuSO4·5H2O crystals. The final mass loss ratio corresponds to the theoretically expected value, although the obtained TG curve deviated from the standard TG curve of CuSO4·5H2O obtained from commercial TG instruments. We attributed the deviation to the inherent temperature non-uniformity, non-isothermal conditions and temperature gradients of metallicwire based microheaters. Finite element (FE) simulations were carried out in order to confirm and gain insights into the non-uniform heating phenomena of microheater and sample. Based on the simulation results, we propose designs that can be realized to make MEMS TG a successful enterprise.en_US
dc.language.isoenen_US
dc.publisherIOPen_US
dc.subjectEEEen_US
dc.subjectMicrocantileversen_US
dc.subjectMicroheatersen_US
dc.subjectFinite element analysisen_US
dc.subjectLaser doppler vibrometeren_US
dc.subjectThermogravimetryen_US
dc.titleCritical analysis of micro-thermogravimetry of CuSO4·5H2O crystals using heatable microcantileversen_US
dc.typeArticleen_US
Appears in Collections:Department of Electrical and Electronics Engineering

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