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Please use this identifier to cite or link to this item: http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/12591
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dc.contributor.authorRao, V. Ramgopal-
dc.date.accessioned2023-10-23T06:56:35Z-
dc.date.available2023-10-23T06:56:35Z-
dc.date.issued2017-02-
dc.identifier.urihttps://ieeexplore.ieee.org/document/7845592-
dc.identifier.urihttp://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12591-
dc.description.abstractSelf-heating and thermal modeling in fin-shaped FETs (FinFETs) are studied in this brief using calibrated 3-D TCAD simulations. Using the second order R th C th network extraction, we demonstrate for the first time a simple method for the modeling of thermal resistances and capacitances for BSIMCMG compact models using small-signal ac capacitance method. We show that the extraction of thermal time constants using the second-order R th C th method is superior to the other techniques used in the literature. Using this technique, we extract the thermal time constants for FinFETs to be in the order of a few nano/pico seconds.en_US
dc.language.isoenen_US
dc.publisherIEEEen_US
dc.subjectEEEen_US
dc.subjectFin-shaped FET (FinFET)en_US
dc.subjectSelf-heating effects (SHEs)en_US
dc.subjectSilicon on insulator (SOI)en_US
dc.titleA Novel TCAD based Thermal Extraction Approach for Nano-scale FinFETsen_US
dc.typeArticleen_US
Appears in Collections:Department of Electrical and Electronics Engineering

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