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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Rao, V. Ramgopal | - |
dc.date.accessioned | 2023-10-23T06:56:35Z | - |
dc.date.available | 2023-10-23T06:56:35Z | - |
dc.date.issued | 2017-02 | - |
dc.identifier.uri | https://ieeexplore.ieee.org/document/7845592 | - |
dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12591 | - |
dc.description.abstract | Self-heating and thermal modeling in fin-shaped FETs (FinFETs) are studied in this brief using calibrated 3-D TCAD simulations. Using the second order R th C th network extraction, we demonstrate for the first time a simple method for the modeling of thermal resistances and capacitances for BSIMCMG compact models using small-signal ac capacitance method. We show that the extraction of thermal time constants using the second-order R th C th method is superior to the other techniques used in the literature. Using this technique, we extract the thermal time constants for FinFETs to be in the order of a few nano/pico seconds. | en_US |
dc.language.iso | en | en_US |
dc.publisher | IEEE | en_US |
dc.subject | EEE | en_US |
dc.subject | Fin-shaped FET (FinFET) | en_US |
dc.subject | Self-heating effects (SHEs) | en_US |
dc.subject | Silicon on insulator (SOI) | en_US |
dc.title | A Novel TCAD based Thermal Extraction Approach for Nano-scale FinFETs | en_US |
dc.type | Article | en_US |
Appears in Collections: | Department of Electrical and Electronics Engineering |
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