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Please use this identifier to cite or link to this item: http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/12591
Title: A Novel TCAD based Thermal Extraction Approach for Nano-scale FinFETs
Authors: Rao, V. Ramgopal
Keywords: EEE
Fin-shaped FET (FinFET)
Self-heating effects (SHEs)
Silicon on insulator (SOI)
Issue Date: Feb-2017
Publisher: IEEE
Abstract: Self-heating and thermal modeling in fin-shaped FETs (FinFETs) are studied in this brief using calibrated 3-D TCAD simulations. Using the second order R th C th network extraction, we demonstrate for the first time a simple method for the modeling of thermal resistances and capacitances for BSIMCMG compact models using small-signal ac capacitance method. We show that the extraction of thermal time constants using the second-order R th C th method is superior to the other techniques used in the literature. Using this technique, we extract the thermal time constants for FinFETs to be in the order of a few nano/pico seconds.
URI: https://ieeexplore.ieee.org/document/7845592
http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12591
Appears in Collections:Department of Electrical and Electronics Engineering

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