DSpace logo

Please use this identifier to cite or link to this item: http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/12598
Full metadata record
DC FieldValueLanguage
dc.contributor.authorRao, V. Ramgopal-
dc.date.accessioned2023-10-23T10:19:58Z-
dc.date.available2023-10-23T10:19:58Z-
dc.date.issued2016-11-
dc.identifier.urihttps://www.sciencedirect.com/science/article/pii/S092540051630781X-
dc.identifier.urihttp://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12598-
dc.description.abstractIn this article, a unique platform with an organic field-effect transistor (OFET) integrated with metal oxide nanoparticles for sensing of H2S gas is presented. Metal oxide nanoparticles such as SnO2 and ZnO synthesized using herbal techniques were used in the fabrication of OFETs using a bi-layer technique. The as-synthesized nanoparticles were characterized by Field Effect Scanning Electron Microscopy (FE-SEM), X-ray diffraction (XRD) and UV–vis Spectroscopy (UV–vis) to establish the material properties. We showed that the SnO2 based OFETs displayed better response for H2S at room temperature (25 °C) compared to the OFETs fabricated with ZnO. The characterization of the sensors by using extracted electrical parameters like field-effect mobility (μ), On-Current (Ion), threshold voltage (VT) and saturation current (IDsat) establish the fact that the SnO2 based OFETs detect H2S gas at room temperature. Plausible mechanisms explaining the H2S gas detection by bi-layer film were discussed. On the other hand, the sensitivity of these OFETs against other reducing gases was less.en_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.subjectEEEen_US
dc.subjectOrganic field effect transistors (OFETs)en_US
dc.subjectH2S detectionen_US
dc.subjectBi-layeren_US
dc.subjectMetal-oxideen_US
dc.titleH2S detection using low-cost SnO2 nano-particle Bi-layer OFETsen_US
dc.typeArticleen_US
Appears in Collections:Department of Electrical and Electronics Engineering

Files in This Item:
There are no files associated with this item.


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.