On the Improved High-Frequency Linearity of Drain Extended MOS Devices

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DC Field	Value	Language
dc.contributor.author	Rao, V. Ramgopal	-
dc.date.accessioned	2023-10-23T10:34:55Z	-
dc.date.available	2023-10-23T10:34:55Z	-
dc.date.issued	2016-11	-
dc.identifier.uri	https://ieeexplore.ieee.org/abstract/document/7740013/similar#similar	-
dc.identifier.uri	http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12599	-
dc.description.abstract	Based upon two-tone measurements, 5dB improvement in the linearity behavior of drain extended MOS (DeMOS) device is reported by novel drain engineering. The presented modification significantly improves the device saturation characteristic, ON resistance and transconductance without affecting the breakdown behavior. Formation of IMD sweet-spot by device design is shown and verified using DeMOS devices fabricated in state-of-the-art 28nm CMOS technology. Detailed analysis towards the achieved improvement is also given.	en_US
dc.language.iso	en	en_US
dc.publisher	IEEE	en_US
dc.subject	EEE	en_US
dc.subject	Radio frequency	en_US
dc.subject	Linearity	en_US
dc.subject	Power amplifiers	en_US
dc.subject	Intermodulation distortion	en_US
dc.subject	Wireless communication	en_US
dc.title	On the Improved High-Frequency Linearity of Drain Extended MOS Devices	en_US
dc.type	Article	en_US
Appears in Collections:	Department of Electrical and Electronics Engineering

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