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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Rao, V. Ramgopal | - |
dc.date.accessioned | 2023-10-23T10:38:29Z | - |
dc.date.available | 2023-10-23T10:38:29Z | - |
dc.date.issued | 2016 | - |
dc.identifier.uri | https://ieeexplore.ieee.org/abstract/document/7433994 | - |
dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12600 | - |
dc.description.abstract | We integrate the first vapor phase self-assembled monolayer (VPSAM) of hydroxy-phenyl zinc porphyrin (ZnTPPOH) on the interlayer dielectric materials and investigate its properties as a copper diffusion barrier. The ZnTPPOH VPSAMs show a 1.5× improvement over the earlier investigated 3-aminopropyltrimethoxysilane self-assembled monolayers (SAMs) in bias temperature stress (BTS) studies. We show that with the porphyrin SAMs, one can achieve an improvement in breakdown field of a low-K dielectric by two times and a drop in copper diffusion by six times as measured by secondary ion mass spectroscopy. | en_US |
dc.language.iso | en | en_US |
dc.publisher | IEEE | en_US |
dc.subject | EEE | en_US |
dc.subject | Barrier layers | en_US |
dc.subject | Copper diffusion | en_US |
dc.subject | Copper interconnects | en_US |
dc.subject | Self-assembly | en_US |
dc.subject | Self-assembled monolayer (SAM) | en_US |
dc.title | A Vapor Phase Self-Assembly of Porphyrin Monolayer as a Copper Diffusion Barrier for Back-End-of-Line CMOS Technologies | en_US |
dc.type | Article | en_US |
Appears in Collections: | Department of Electrical and Electronics Engineering |
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