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Title: | Effect of Metal Gate Granularity Induced Random Fluctuations on Si Gate-All-Around Nanowire MOSFET 6-T SRAM Cell Stability |
Authors: | Rao, V. Ramgopal |
Keywords: | EEE Gate-all-around Metal gate granularity Silicon nanowire FET SRAM Work function |
Issue Date: | Mar-2016 |
Publisher: | IEEE |
Abstract: | In this paper, we present a variability-aware 3-D mixed-mode device simulation study of Si gate-all-around (GAA) nanowire MOSFET (NWFET)-based 6-T static random access memory (SRAM) bit-cell stability and performance considering metal-gate granularity (MGG) induced intrinsic device random fluctuations and quantum corrected room temperature drift-diffusion transport. The impact of MGG contributed intrinsic variability on Si GAA n- and p-NWFETs-based SRAM cell static noise margins (SNM), write and read delay time are statistically analyzed. Our statistical simulations predict acceptable stability for the Si NWFET 6-T SRAM cell with V DD downscaling up to 0.5 V. The simulation estimated mean hold SNM values follow a lowering trend with V DD downscaling, similar to the hold SNM experimental data reported in the literature for Si GAA NWFET-based SRAM arrays. We further show a linear variation in statistical variance of hold SNM with gate metal grain size and work function. |
URI: | https://ieeexplore.ieee.org/document/7374720 http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12604 |
Appears in Collections: | Department of Electrical and Electronics Engineering |
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