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Title: Anomalous Width Dependence of Gate Current in High- K Metal Gate nMOS Transistors
Authors: Rao, V. Ramgopal
Keywords: EEE
MOS transistor
Device scaling
Trap assisted tunneling
Oxygen vacancies
Issue Date: Aug-2015
Publisher: IEEE
Abstract: This letter analyzes the width dependence of gate current observed in nMOS transistors fabricated using the 28-nm gate-first CMOS process. It is experimentally shown that the gate current density is ~10× lower for 80-nm wide high permittivity (K) dielectrics and metal gate nMOS transistors compared with 1-μm wider ones. The physical mechanism responsible for this anomalous width dependence is identified and attributed to the reduction in the average number of positively charged oxygen vacancies present in HfO 2 for narrow width transistors.
URI: https://ieeexplore.ieee.org/abstract/document/7116489
http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12615
Appears in Collections:Department of Electrical and Electronics Engineering

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