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Title: | Metal-Gate Granularity-Induced Threshold Voltage Variability and Mismatch in Si Gate-All-Around Nanowire n-MOSFETs |
Authors: | Rao, V. Ramgopal |
Keywords: | EEE Gate-all-around (GAA) Metal-gate granularity (MGG) Silicon nanowire FET Work function (WF) |
Issue Date: | Nov-2014 |
Publisher: | IEEE |
Abstract: | The metal-gate granularity-induced threshold voltage (V T ) variability and V T mismatch in Si gate-all-around (GAA) nanowire n-MOSFETs (n-NWFETs) are studied using coupled 3-D statistical device simulations considering quantum corrected room temperature drift-diffusion transport. The impact of metal-gate crystal grain size on linear and saturation mode V T variability are analyzed. The V T mismatch study predicts lower mismatch figure of merit (A VT ) in TiN-gated Si GAA n-NWFETs compared with the reported experimental mismatch data for TiN-gated Si FinFETs. |
URI: | https://ieeexplore.ieee.org/document/6895292 http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12624 |
Appears in Collections: | Department of Electrical and Electronics Engineering |
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