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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Rao, V. Ramgopal | - |
dc.date.accessioned | 2023-10-26T05:12:26Z | - |
dc.date.available | 2023-10-26T05:12:26Z | - |
dc.date.issued | 2014-05 | - |
dc.identifier.uri | https://ieeexplore.ieee.org/document/6784309 | - |
dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12629 | - |
dc.description.abstract | Capacitance-voltage (C-V) measurements represent a very useful technique, however, its usage in organic devices has been a subject of debate because of the role played by the ambient-induced unintentional doping. In this letter, we show that, contrary to the current understanding, prolonged ambient exposure does not significantly increase the unintentional doping density of organic semiconductors (OSCs). Our C-V measurements and detailed numerical simulations clearly indicate that the observed dispersion in C-V characteristics can be attributed to the variation in the carrier injection barrier at the OSC/electrode interface. An analytical relation between the injection barrier and the response time is derived to describe the C-V characteristics of organic devices. | en_US |
dc.language.iso | en | en_US |
dc.publisher | IEEE | en_US |
dc.subject | EEE | en_US |
dc.subject | Pentacene | en_US |
dc.subject | Capacitance | en_US |
dc.subject | Injection Barrier | en_US |
dc.subject | Organic field effect transistors (OFETs) | en_US |
dc.title | Role of Injection Barrier in Capacitance-Voltage Measurements of Organic Devices | en_US |
dc.type | Article | en_US |
Appears in Collections: | Department of Electrical and Electronics Engineering |
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