Please use this identifier to cite or link to this item:
http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/12629
Title: | Role of Injection Barrier in Capacitance-Voltage Measurements of Organic Devices |
Authors: | Rao, V. Ramgopal |
Keywords: | EEE Pentacene Capacitance Injection Barrier Organic field effect transistors (OFETs) |
Issue Date: | May-2014 |
Publisher: | IEEE |
Abstract: | Capacitance-voltage (C-V) measurements represent a very useful technique, however, its usage in organic devices has been a subject of debate because of the role played by the ambient-induced unintentional doping. In this letter, we show that, contrary to the current understanding, prolonged ambient exposure does not significantly increase the unintentional doping density of organic semiconductors (OSCs). Our C-V measurements and detailed numerical simulations clearly indicate that the observed dispersion in C-V characteristics can be attributed to the variation in the carrier injection barrier at the OSC/electrode interface. An analytical relation between the injection barrier and the response time is derived to describe the C-V characteristics of organic devices. |
URI: | https://ieeexplore.ieee.org/document/6784309 http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12629 |
Appears in Collections: | Department of Electrical and Electronics Engineering |
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.