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Please use this identifier to cite or link to this item: http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/12630
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dc.contributor.authorRao, V. Ramgopal-
dc.date.accessioned2023-10-26T06:27:22Z-
dc.date.available2023-10-26T06:27:22Z-
dc.date.issued2014-12-
dc.identifier.urihttps://ieeexplore.ieee.org/document/6784305-
dc.identifier.urihttp://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12630-
dc.description.abstractIn this paper, we present a novel approach for fabricating piezoresistive silicon nitride cantilevers using polymer as an anchor. In our approach, the silicon nitride structural layers, as well as the polycrystalline silicon piezoresistive layer, are deposited by a low temperature hot-wire chemical vapor deposition process. The novelty of this process is that the silicon wafer is not consumed and is reusable, and the process also allows use of alternate materials for cantilever fabrication in place of silicon substrate. The fabricated silicon nitride cantilevers are characterized for their mechanical and electromechanical behavior.en_US
dc.language.isoenen_US
dc.publisherIEEEen_US
dc.subjectEEEen_US
dc.subjectMEMSen_US
dc.subjectMicrocantileversen_US
dc.subjectSilicon nitrideen_US
dc.subjectPiezoresistanceen_US
dc.subjectPolymer anchoren_US
dc.titleA Novel SU8 Polymer Anchored Low Temperature HWCVD Nitride Polysilicon Piezoresitive Cantileveren_US
dc.typeArticleen_US
Appears in Collections:Department of Electrical and Electronics Engineering

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