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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Rao, V. Ramgopal | - |
dc.date.accessioned | 2023-10-26T09:39:40Z | - |
dc.date.available | 2023-10-26T09:39:40Z | - |
dc.date.issued | 2013-05 | - |
dc.identifier.uri | https://www.sciencedirect.com/science/article/abs/pii/S1566119913000827 | - |
dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12641 | - |
dc.description.abstract | Effects of ionizing radiation exposure of γ-rays on the copper(II) phthalocyanine thin-films are studied using photoelectron spectroscopy techniques and electrostatic force microscopy. Based on the changes observed in the electrical properties of the copper(II) phthalocyanine thin-film, organic electronic devices are demonstrated in this work for ionizing radiation dosimetry applications. Encapsulation of silicon nitride layer deposited by hot-wire CVD technique, for copper(II) phthalocyanine based organic electronic devices, has been discussed for ionizing radiation sensing. A design technique of stacking organic field effect transistors in parallel was verified for improving the current sensitivity of the sensors for ionizing radiation dosimetry. | en_US |
dc.language.iso | en | en_US |
dc.publisher | Elsevier | en_US |
dc.subject | EEE | en_US |
dc.subject | Ionizing radiation | en_US |
dc.subject | Dosimetry | en_US |
dc.title | Copper(II) phthalocyanine based organic electronic devices for ionizing radiation dosimetry applications | en_US |
dc.type | Article | en_US |
Appears in Collections: | Department of Electrical and Electronics Engineering |
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