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Please use this identifier to cite or link to this item: http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/12641
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dc.contributor.authorRao, V. Ramgopal-
dc.date.accessioned2023-10-26T09:39:40Z-
dc.date.available2023-10-26T09:39:40Z-
dc.date.issued2013-05-
dc.identifier.urihttps://www.sciencedirect.com/science/article/abs/pii/S1566119913000827-
dc.identifier.urihttp://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12641-
dc.description.abstractEffects of ionizing radiation exposure of γ-rays on the copper(II) phthalocyanine thin-films are studied using photoelectron spectroscopy techniques and electrostatic force microscopy. Based on the changes observed in the electrical properties of the copper(II) phthalocyanine thin-film, organic electronic devices are demonstrated in this work for ionizing radiation dosimetry applications. Encapsulation of silicon nitride layer deposited by hot-wire CVD technique, for copper(II) phthalocyanine based organic electronic devices, has been discussed for ionizing radiation sensing. A design technique of stacking organic field effect transistors in parallel was verified for improving the current sensitivity of the sensors for ionizing radiation dosimetry.en_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.subjectEEEen_US
dc.subjectIonizing radiationen_US
dc.subjectDosimetryen_US
dc.titleCopper(II) phthalocyanine based organic electronic devices for ionizing radiation dosimetry applicationsen_US
dc.typeArticleen_US
Appears in Collections:Department of Electrical and Electronics Engineering

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