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Title: | Strain induced anisotropic effect on electron mobility in C60 based organic field effect transistors |
Authors: | Rao, V. Ramgopal |
Keywords: | EEE Electron mobility Anisotropic Motion |
Issue Date: | Aug-2022 |
Publisher: | AIP |
Abstract: | The electron mobility was found to increase (decrease) upon applied compressive (tensile) strain, respectively, when a high-performance flexible C60-based organic field-effect transistor (OFET) was subjected to different bending radii. The observed almost twofold relative change in the electron mobility is considerably larger than that reported before for pentacene-based OFETs. Moreover, the strain dependency of electron mobility in C60 films is strongly anisotropic with respect to the strain direction measured relative to the current flow. Analysis within a hopping-transport model for OFET mobility suggests that the observed strain dependency on electron transport is dominated mostly by the change of inter-grain coupling in polycrystalline C60 films. |
URI: | https://pubs.aip.org/aip/apl/article/101/8/083305/111989/Strain-induced-anisotropic-effect-on-electron http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12645 |
Appears in Collections: | Department of Electrical and Electronics Engineering |
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