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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Rao, V. Ramgopal | - |
dc.date.accessioned | 2023-10-26T10:01:29Z | - |
dc.date.available | 2023-10-26T10:01:29Z | - |
dc.date.issued | 2022-08 | - |
dc.identifier.uri | https://pubs.aip.org/aip/apl/article/101/8/083305/111989/Strain-induced-anisotropic-effect-on-electron | - |
dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12645 | - |
dc.description.abstract | The electron mobility was found to increase (decrease) upon applied compressive (tensile) strain, respectively, when a high-performance flexible C60-based organic field-effect transistor (OFET) was subjected to different bending radii. The observed almost twofold relative change in the electron mobility is considerably larger than that reported before for pentacene-based OFETs. Moreover, the strain dependency of electron mobility in C60 films is strongly anisotropic with respect to the strain direction measured relative to the current flow. Analysis within a hopping-transport model for OFET mobility suggests that the observed strain dependency on electron transport is dominated mostly by the change of inter-grain coupling in polycrystalline C60 films. | en_US |
dc.language.iso | en | en_US |
dc.publisher | AIP | en_US |
dc.subject | EEE | en_US |
dc.subject | Electron mobility | en_US |
dc.subject | Anisotropic Motion | en_US |
dc.title | Strain induced anisotropic effect on electron mobility in C60 based organic field effect transistors | en_US |
dc.type | Article | en_US |
Appears in Collections: | Department of Electrical and Electronics Engineering |
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