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Please use this identifier to cite or link to this item: http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/12647
Title: A Novel Drain-Extended FinFET Device for High-Voltage High-Speed Applications
Authors: Rao, V. Ramgopal
Keywords: EEE
Drain extended MOSFET (DeMOS)
FinFET
High voltage (HV)
System-on-a-chip (SoC)
Issue Date: Oct-2012
Publisher: IEEE
Abstract: A novel drain-extended FinFET device is proposed in this letter for high-voltage and high-speed applications. A 2 × better R ON versus V BD tradeoff is shown from technology computer-aided design simulations for the proposed device, when compared with a conventional device option. Moreover, a device design and optimization guideline has been provided for the proposed device.
URI: https://ieeexplore.ieee.org/abstract/document/6269049
http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12647
Appears in Collections:Department of Electrical and Electronics Engineering

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