![DSpace logo](/jspui/image/logo.gif)
Please use this identifier to cite or link to this item:
http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/12669
Title: | Fabrication of La0.7Sr0.3MnO3–Si Heterojunctions Using a CMOS-Compatible Citric Acid Etch Process |
Authors: | Rao, V. Ramgopal |
Keywords: | EEE Citric acid etch Magnetoelectronic devices Manganite heterojunctions Silicon technology |
Issue Date: | Mar-2011 |
Publisher: | IEEE |
Abstract: | We report La 0.7 Sr 0.3 MnO 3 (LSMO)-Si heterojunctions fabricated using a new etch process that is compatible with standard CMOS technology. For a p-n-junction device fabrication, complete etch of a masked LSMO film was done using citric acid and was confirmed using superconducting quantum interferometry device magnetometry and energy-dispersive X-ray analysis. The etch conditions were found to have a negligible effect on the step height and electrical properties of other key silicon-technology materials such as photoresists, polysilicon, and silicon dioxide. This has been confirmed using profilometer measurements and C-V characteristics. |
URI: | https://ieeexplore.ieee.org/document/5706349/keywords#keywords http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12669 |
Appears in Collections: | Department of Electrical and Electronics Engineering |
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.