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DC Field | Value | Language |
---|---|---|
dc.contributor.author | Rao, V. Ramgopal | - |
dc.date.accessioned | 2023-10-27T08:52:15Z | - |
dc.date.available | 2023-10-27T08:52:15Z | - |
dc.date.issued | 2011-03 | - |
dc.identifier.uri | https://ieeexplore.ieee.org/document/5706349/keywords#keywords | - |
dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12669 | - |
dc.description.abstract | We report La 0.7 Sr 0.3 MnO 3 (LSMO)-Si heterojunctions fabricated using a new etch process that is compatible with standard CMOS technology. For a p-n-junction device fabrication, complete etch of a masked LSMO film was done using citric acid and was confirmed using superconducting quantum interferometry device magnetometry and energy-dispersive X-ray analysis. The etch conditions were found to have a negligible effect on the step height and electrical properties of other key silicon-technology materials such as photoresists, polysilicon, and silicon dioxide. This has been confirmed using profilometer measurements and C-V characteristics. | en_US |
dc.language.iso | en | en_US |
dc.publisher | IEEE | en_US |
dc.subject | EEE | en_US |
dc.subject | Citric acid etch | en_US |
dc.subject | Magnetoelectronic devices | en_US |
dc.subject | Manganite heterojunctions | en_US |
dc.subject | Silicon technology | en_US |
dc.title | Fabrication of La0.7Sr0.3MnO3–Si Heterojunctions Using a CMOS-Compatible Citric Acid Etch Process | en_US |
dc.type | Article | en_US |
Appears in Collections: | Department of Electrical and Electronics Engineering |
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