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Please use this identifier to cite or link to this item: http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/12671
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dc.contributor.authorRao, V. Ramgopal-
dc.date.accessioned2023-10-27T09:06:58Z-
dc.date.available2023-10-27T09:06:58Z-
dc.date.issued2011-06-
dc.identifier.urihttps://ieeexplore.ieee.org/abstract/document/5742994-
dc.identifier.urihttp://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12671-
dc.description.abstractIn this paper, the impact of process/technology co-optimization on System-on-Chip (SoC) performance using detailed 3-D process/device simulations has been studied for nanoscale FinFET devices. We investigated challenges in FinFET device optimization and scaling while using standard ion implantation process for both overlap and underlap designs. Moreover, an implant-free (IF) complementary metal-oxide-semiconductor process is discussed for better scalability with improved performance. FinFETs designed using this IF process shows a ~2× improvement in static random-access memory and digital input/ output performance. Additionally, a modification to the IF process is proposed, which further helps in achieving an improved logic and analog performance for overall SoC developmenten_US
dc.language.isoenen_US
dc.publisherIEEEen_US
dc.subjectEEEen_US
dc.subjectExtremely thin SOI (ETSOI)en_US
dc.subjectFinFETen_US
dc.subjectImplant-free processen_US
dc.subjectIon implantation and system-on-chip (SoC)en_US
dc.titleToward System on Chip (SoC) Development Using FinFET Technology: Challenges, Solutions, Process Co-Development & Optimization Guidelinesen_US
dc.typeArticleen_US
Appears in Collections:Department of Electrical and Electronics Engineering

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