![DSpace logo](/jspui/image/logo.gif)
Please use this identifier to cite or link to this item:
http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/12671
Full metadata record
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Rao, V. Ramgopal | - |
dc.date.accessioned | 2023-10-27T09:06:58Z | - |
dc.date.available | 2023-10-27T09:06:58Z | - |
dc.date.issued | 2011-06 | - |
dc.identifier.uri | https://ieeexplore.ieee.org/abstract/document/5742994 | - |
dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12671 | - |
dc.description.abstract | In this paper, the impact of process/technology co-optimization on System-on-Chip (SoC) performance using detailed 3-D process/device simulations has been studied for nanoscale FinFET devices. We investigated challenges in FinFET device optimization and scaling while using standard ion implantation process for both overlap and underlap designs. Moreover, an implant-free (IF) complementary metal-oxide-semiconductor process is discussed for better scalability with improved performance. FinFETs designed using this IF process shows a ~2× improvement in static random-access memory and digital input/ output performance. Additionally, a modification to the IF process is proposed, which further helps in achieving an improved logic and analog performance for overall SoC development | en_US |
dc.language.iso | en | en_US |
dc.publisher | IEEE | en_US |
dc.subject | EEE | en_US |
dc.subject | Extremely thin SOI (ETSOI) | en_US |
dc.subject | FinFET | en_US |
dc.subject | Implant-free process | en_US |
dc.subject | Ion implantation and system-on-chip (SoC) | en_US |
dc.title | Toward System on Chip (SoC) Development Using FinFET Technology: Challenges, Solutions, Process Co-Development & Optimization Guidelines | en_US |
dc.type | Article | en_US |
Appears in Collections: | Department of Electrical and Electronics Engineering |
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.