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dc.contributor.authorRao, V. Ramgopal-
dc.date.accessioned2023-10-27T09:10:55Z-
dc.date.available2023-10-27T09:10:55Z-
dc.date.issued2011-11-
dc.identifier.urihttps://www.sciencedirect.com/science/article/abs/pii/S0924424711000653-
dc.identifier.urihttp://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12672-
dc.description.abstractThe organic field effect transistors (OFETs) with regioregular poly 3-hexylthiophene (rr-P3HT) and hexafluoro-2-propanol-substituted polysiloxane (SXFA) as an organic layer, have been used for detection of explosive vapors with excellent sensitivity of less than 70 ppt for 1,3,5-trinitro-1,3,5-triazacyclohexane (RDX) and less than 100 ppt for 2,4,6-trinitrotoluene (TNT). The sensor response (% change in saturation current) was found to be 125 ± 10% for TNT and 90 ± 10% for RDX. It was also observed that the incorporation of CuII tetraphenylporphyrin (CuTPP) into rr-P3HT/SXFA matrix resulted in an improved selectivity for the vapors of nitro based analytes (TNT, RDX and DNB) as compared to the vapors of non explosive oxidizing agents such as nitrobenzene (NB), benzoquinone (BQ) and benzophenone (BP). This is attributed to the increased binding of the vapors containing nitro compound to the thin films due to the presence of CuTTP. Spin coated thin films were further characterized by Atomic Force Microscopy (AFM) and Electrostatic Force Microscopy (EFM).en_US
dc.language.isoenen_US
dc.publisherElsevieren_US
dc.subjectEEEen_US
dc.subjectPoly(3-hexylthiophene)en_US
dc.subjectOrganic field effect transistors (OFETs)en_US
dc.subjectVapor detectionen_US
dc.titlePoly(3-hexylthiophene) and hexafluoro-2-propanol-substituted polysiloxane based OFETs as a sensor for explosive vapor detectionen_US
dc.typeArticleen_US
Appears in Collections:Department of Electrical and Electronics Engineering

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