A Solution Toward the OFF-State Degradation in Drain-Extended MOS Device

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Title:	A Solution Toward the OFF-State Degradation in Drain-Extended MOS Device
Authors:	Rao, V. Ramgopal
Keywords:	EEE Band-to-band tunnelling (BTBT) Drain extended Drain-extended MOSFET (DeMOS) Time-dependent dielectric breakdown (TDDB)
Issue Date:	Dec-2010
Publisher:	IEEE
Abstract:	We investigated the surface band-to-band tunnelling (BTBT) current under the off-state condition in drain-extended MOS (DeMOS) devices. We found significant gate-induced drain leakage current due to surface BTBT, which was also reported earlier as the dominant cause of early time-dependent dielectric breakdown and device failure. Furthermore, a layout solution for the existing DeMOS device is proposed in order to mitigate the surface BTBT current and the associated gate oxide reliability issues, without sacrificing the mixed-signal performance of the device.
URI:	https://ieeexplore.ieee.org/document/5610723 http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12674
Appears in Collections:	Department of Electrical and Electronics Engineering

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