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http://dspace.bits-pilani.ac.in:8080/jspui/xmlui/handle/123456789/12674Full metadata record
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Rao, V. Ramgopal | - |
| dc.date.accessioned | 2023-10-27T09:24:25Z | - |
| dc.date.available | 2023-10-27T09:24:25Z | - |
| dc.date.issued | 2010-12 | - |
| dc.identifier.uri | https://ieeexplore.ieee.org/document/5610723 | - |
| dc.identifier.uri | http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12674 | - |
| dc.description.abstract | We investigated the surface band-to-band tunnelling (BTBT) current under the off-state condition in drain-extended MOS (DeMOS) devices. We found significant gate-induced drain leakage current due to surface BTBT, which was also reported earlier as the dominant cause of early time-dependent dielectric breakdown and device failure. Furthermore, a layout solution for the existing DeMOS device is proposed in order to mitigate the surface BTBT current and the associated gate oxide reliability issues, without sacrificing the mixed-signal performance of the device. | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | IEEE | en_US |
| dc.subject | EEE | en_US |
| dc.subject | Band-to-band tunnelling (BTBT) | en_US |
| dc.subject | Drain extended | en_US |
| dc.subject | Drain-extended MOSFET (DeMOS) | en_US |
| dc.subject | Time-dependent dielectric breakdown (TDDB) | en_US |
| dc.title | A Solution Toward the OFF-State Degradation in Drain-Extended MOS Device | en_US |
| dc.type | Article | en_US |
| Appears in Collections: | Department of Electrical and Electronics Engineering | |
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