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Title: | A Binary Tunnel Field Effect Transistor with a Steep Sub-threshold Swing and Increased ON Current |
Authors: | Rao, V. Ramgopal |
Keywords: | EEE Transistor Binary tunnel field effect transistor (BTFET) |
Issue Date: | 2010 |
Publisher: | IOP |
Abstract: | A variant tunnel field effect transistor structure called the binary tunnel field effect transistor (BTFET) for low voltage and near ideal switching characteristics is proposed. The BTFET relies on a binary tunneling distance (HIGH and LOW) for its operation to achieve a steep sub-threshold swing with a predicted range of 5 mV/dec. The transition of tunneling distance from HIGH to LOW state is a step-function of the gate voltage with the threshold voltage as a transition voltage. BTFET has a high on-current due to the high gate electric field and a large tunneling cross section area. An orientation dependent non-local band-to-band tunneling model was used to analyze the DC characteristics of the device. |
URI: | https://iopscience.iop.org/article/10.1143/JJAP.49.120203/meta http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12676 |
Appears in Collections: | Department of Electrical and Electronics Engineering |
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