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Title: | Low-Operating-Voltage Operation and Improvement in Sensitivity With Passivated OFET Sensors for Determining Total Dose Radiation |
Authors: | Rao, V. Ramgopal |
Keywords: | EEE Array of organic field-effect transistor (OFET) sensors Improved sensitivity Ionizing radiation |
Issue Date: | Dec-2010 |
Publisher: | IEEE |
Abstract: | Using high- k material in a gate dielectric stack, low-operating-voltage organic semiconducting material sensors for determining total dose radiation are proposed. To improve the stability of organic semiconducting layer in the atmospheric conditions, a thin silicon nitride layer deposited by hot-wire CVD process was used as a passivation layer. Furthermore, in order to achieve higher sensitivity, a parallel connection of organic field-effect transistors (OFETs) is explored in this letter. These sensors are exposed to ionizing radiation using a cobalt-60 radiation source for different total dose values. A three-times improvement in sensitivity was observed in the off current with a three-OFET array. |
URI: | https://ieeexplore.ieee.org/document/5605225 http://dspace.bits-pilani.ac.in:8080/xmlui/handle/123456789/12677 |
Appears in Collections: | Department of Electrical and Electronics Engineering |
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